Polarization Modulation in Ferroelectric Organic Field-Effect Transistors

Controlling polarization in ferroelectric oxides has enabled fast switching and low-power operation in metal-oxide-semiconductor field-effect transistors (MOSFETs). Parallel studies on the performance of ferroelectric-polymer-based organic FETs (OFETs), where the polarization direction is rotated by 90\ifmmode^\circ\else\textdegree\fi{}, are lacking. This article examines the effects of external electrical poling on the performance of small-molecule OFETs. The overall transistor properties are enhanced when the ferroelectric layer is vertically poled, and are easily and reversibly controlled by switching the polarization direction. The results highlight further design principles for improving charge transport in OFETs.