石墨烯
材料科学
成核
晶界
化学气相沉积
化学物理
晶粒生长
纳米技术
化学工程
粒度
冶金
微观结构
热力学
化学
物理
工程类
作者
Yang Wang,Yu Cheng,Yunlu Wang,Shuai Zhang,Chen Xu,Xuewei Zhang,Miao Wang,Yang Xia,Qunyang Li,Pei Zhao,Hongtao Wang
出处
期刊:NANO
[World Scientific]
日期:2018-08-01
卷期号:13 (08): 1850088-1850088
被引量:5
标识
DOI:10.1142/s1793292018500881
摘要
Many aspects in the chemical vapor deposition (CVD) growth of graphene remain unclear such as its behavior near the catalyst grain boundaries. Here we investigate the CVD growth mechanism of graphene across the Cu grain boundaries using unidirectional aligned graphene domains, which simplifies the analysis of both graphene and Cu to a large extent. We found that for a graphene domain grown across the Cu grain boundary, the domain orientation is determined by the Cu grain where the domain nucleation center is located, and the Cu grain boundary will not change the growth behavior for this graphene domain. This growth mechanism is consistent with the Cu-step-attached nucleation and edge-attachment-limited growth mechanism for H-terminated graphene domains and will provide more guidance for the synthesis of high-quality graphene with less domain boundaries.
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