Julien Madéo,Michael K. L. Man,Chakradhar Sahoo,Marshall Campbell,Vivek Pareek,E Laine Wong,Abdullah Al‐Mahboob,Nicholas S. Chan,Arka Karmakar,Bala Murali Krishna Mariserla,Xiaoqin Li,Tony F. Heinz,Ting Cao,Keshav M. Dani
出处
期刊:Science [American Association for the Advancement of Science (AAAS)] 日期:2020-12-04卷期号:370 (6521): 1199-1204被引量:97
Resolving the momentum degree of freedom of excitons - electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained a largely elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum forbidden dark excitons, which critically impact proposed opto-electronic technologies, but are not directly accessible via optical techniques. Here, we probe the momentum-state of excitons in a WSe2 monolayer by photoemitting their constituent electrons, and resolving them in time, momentum and energy. We obtain a direct visual of the momentum forbidden dark excitons, and study their properties, including their near-degeneracy with bright excitons and their formation pathways in the energy-momentum landscape. These dark excitons dominate the excited state distribution - a surprising finding that highlights their importance in atomically thin semiconductors.