激子
物理
半导体
动量(技术分析)
电子
比克西顿
激发态
库仑
原子物理学
凝聚态物理
量子力学
财务
经济
作者
Julien Madéo,Michael K. L. Man,Chakradhar Sahoo,Marshall Campbell,Vivek Pareek,E Laine Wong,Abdullah Al‐Mahboob,Nicholas S. Chan,Arka Karmakar,Bala Murali Krishna Mariserla,Xiaoqin Li,Tony F. Heinz,Ting Cao,Keshav M. Dani
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2020-12-04
卷期号:370 (6521): 1199-1204
被引量:69
标识
DOI:10.1126/science.aba1029
摘要
Resolving the momentum degree of freedom of excitons - electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained a largely elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum forbidden dark excitons, which critically impact proposed opto-electronic technologies, but are not directly accessible via optical techniques. Here, we probe the momentum-state of excitons in a WSe2 monolayer by photoemitting their constituent electrons, and resolving them in time, momentum and energy. We obtain a direct visual of the momentum forbidden dark excitons, and study their properties, including their near-degeneracy with bright excitons and their formation pathways in the energy-momentum landscape. These dark excitons dominate the excited state distribution - a surprising finding that highlights their importance in atomically thin semiconductors.
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