Preferred‐oriented polycrystalline Y3Fe5O12 films grown on quartz with low microwave loss

Abstract Yttrium iron garnet (YIG) is an ideal magnetic insulator for room temperature microwave and spintronic applications. The growth of high‐quality YIG films on substrates other than isostructural Gadolinium gallium garnet (GGG) is a primary requirement to integrate with current semiconductor electronics. Here, we are presenting the growth of highly oriented YIG films on amorphous quartz substrates using pulsed laser deposition. Structural characterization suggests the growth of pure polycrystalline garnet phase with preferred (100) orientation. The 430‐nm thick YIG film shows a saturation magnetization (4 π M S ) of 1620 (92% of the bulk value of YIG) with a very small coercive field of 6 Oe and a minimum value for ferromagnetic resonance linewidth of 78 Oe for the magnetic field applied perpendicular to the film plane. Estimated damping constant shows reasonably low value, beneficial for realizing the applications integrated with semiconductor technology. Importantly, the formation of YIG with preferred orientation could unveil enormous opportunities in the preparation of textured or single crystal materials on amorphous substrates.