Tunable electronic and optical properties of BAs/InS heterojunction based on first-principles calculations

Abstract The geometric structure, electronic properties, and optical characteristics of BAs/InS heterostructures are investigated in the present study through the first-principles calculations of Density Functional Theory (DFT). The analysis shows that H1-stacking BAs/InS heterostructures with an interlayer distance of 3.6 Å have excellent stability compared with monolayer materials. Furthermore, this heterostructure is classified as a Type-II heterostructure, which promotes the formation of photo-generated electron-hole pairs. The band alignment, direction and magnitude of electronic transfer in BAs/InS heterostructures can be fine-tuned by applying the external electric field and stress, which can also induce a transition from Type-II to Type-I behavior, the indirect bandgap to direct bandgap also occurs. Moreover, absorption coefficient of the heterostructure can also be moderately enhanced and adjusted by external electric fields and stress. These findings suggest that BAs/InS heterostructures have potential applications in photoelectric detectors and laser technology.