碳化硅
材料科学
硅
基质(水族馆)
图层(电子)
化学工程
外延
纳米技术
晶体硅
光电子学
复合材料
海洋学
工程类
地质学
作者
Yana Suchikova,Сергій Ковачов,Ihor Bohdanov,Artem L. Kozlovskiy,Maxim V. Zdorovets,Anatoli I. Popov
标识
DOI:10.3390/technologies11060152
摘要
This article presents an enhanced method for synthesizing β-SiC on a silicon substrate, utilizing porous silicon as a buffer layer, followed by thermal carbide formation. This approach ensured strong adhesion of the SiC film to the substrate, facilitating the creation of a hybrid hetero-structure of SiC/por-Si/mono-Si. The surface morphology of the SiC film revealed islands measuring 2–6 μm in diameter, with detected micropores that were 70–80 nm in size. An XRD analysis confirmed the presence of spectra from crystalline silicon and crystalline silicon carbide in cubic symmetry. The observed shift in spectra to the low-frequency zone indicated the formation of nanostructures, correlating with our SEM analysis results. These research outcomes present prospects for the further utilization and optimization of β-SiC synthesis technology for electronic device development.
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