材料科学
异质结
钙钛矿(结构)
化学物理
光电效应
吸收(声学)
纳米技术
化学工程
光电子学
复合材料
物理
工程类
作者
Yao Guo,Yuanbin Xue,Cuihuan Geng,Chengbo Li
标识
DOI:10.1016/j.mtcomm.2022.104524
摘要
The structural, electronic, and optical characteristics of the CNT/CsSnX3 (X = Cl, Br, I) interfaces are investigated via first-principles calculations. All selected CNT/CsSnX3 interfaces remain stable in energy and their interfacial properties can be varied with the halogen anions changing from Cl to I. The calculated cohesive energy, interlayer distance as well as electron localization function indicate the CNT/CsSnX3 systems belong to vdW heterojunctions with weak interactions. Due to the large potential difference between CNT and CsSnX3, the internal electrostatic field formed at the interface, which reduces the probability of the electron–hole recombination effectively. The interfacial charges transfer from CsSnX3 to CNT when they contact. The absorption spectra of CNT/CsSnX3 contacts are higher than the corresponding CNT and CsSnX3, which could be attributed to the formation of interfacial contact. What's more, among all selected composites, CNT/CsSnI3 contacts with large charge transfers and minor structural changes should be the most appropriate configurations to get excellent photoelectric properties. These results exhibit interfacial properties of CNT/CsSnX3 from the atomic scale and provide theoretical guidance for developing novel perovskite devices.
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