Electronic and Structural Engineering of Atomically Dispersed Isolated Single‐Atom and Alloy Architectures

Abstract Precise configurations of isolated metal atoms in nitrogen‐doped carbon materials with 2D single or multilayers and 3D nanoarchitectures are gaining attention owing to their good stability and activity at high current densities. Atomic metal–N x moieties, which utilize maximum atoms to attain high intrinsic activity and novel electronic architecture of support materials, facilitate strong interaction between the central metal atom and support matrix. However, resource consumption is considerably high due to the inferior atomic utilization of active sites. Therefore, energy‐efficient electrochemical processes are needed to develop advanced isolated single‐atom architecture, which would provide high atom‐utilization and good durability. Herein, the concepts of atomically dispersed metal sites in single‐atom and alloy architectures and their electronic features associated with structural evolution are discussed. Opportunities and challenges associated with the use of isolated single‐atoms in 2D materials are discussed based on their unique electronic defects, low‐valence central metals, mechanical flexibility, and maximum access to metal sites. This insightful revisit into the engineering of single‐atom and alloy architectures would provide a profound understanding of electronic modulations and regulation of geometric characteristics, and unravels potential directions for electrochemical energy conversion, charge storage, and sensing processes.