氢
化学
单层
吸附
空位缺陷
密度泛函理论
Atom(片上系统)
反键分子轨道
氢原子
自旋(空气动力学)
原子物理学
结晶学
化学物理
分子物理学
物理化学
计算化学
物理
群(周期表)
嵌入式系统
电子
有机化学
热力学
量子力学
原子轨道
生物化学
计算机科学
作者
Lei Guo,Rui Li,Jiawei Jiang,Xueping Fan,Ji‐Jun Zou,Wenbo Mi
标识
DOI:10.1021/acs.jpcc.2c07007
摘要
Spin reversal induced by adsorbates will cause intersite communication between the active and adjacent sites, which modulates the exchange coupling strength and spin alignment direction of adjacent atoms. Here, spin reversal induced by H adsorption and hydrogen evolution reaction (HER) performance of defective H-VS2 are studied by density-functional theory. The spin of V/S atoms around double S vacancies on different atomic layers (V2S) exhibits continuous reversals with H adsorption, which reverses once for S atoms around single V vacancy (VV). Moreover, the adsorption energies of the second H atom decreased in V2S- and VV-modified H-VS2 systems. Additionally, V2S and VV can activate the inert basal plane of H-VS2, and the increased antibonding filling and p-band center in H-VS2 with VV will weaken the interaction between S–H atoms and promote the desorption of H2, which causes lower Gibbs free energy in H-VS2 with VV than V2S and the pure H-VS2 monolayer.
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