pBn type short-wavelength infrared photodetector with ultralow dark current and extended wavelength based on strained InGaAs/GaAsSb superlattice

An InGaAs/GaAsSb type II superlattice (T2SL) absorber is a promising alternative material for a short-wavelength infrared (SWIR) photodetector due to the largely tunable bandgap by adjusting the thickness and material composition of InGaAs and GaAsSb in each T2SL period. We demonstrate a pBn type SWIR photodetector consisting of a strained InGaAs/GaAsSb T2SL absorber and AlGaAsSb barrier. The device presents an ultralow dark current density of 1.81 × 10