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B‒N covalent bond-involved π-extension of multiple resonance emitters enables high-performance narrowband electroluminescence

材料科学 有机发光二极管 光电子学 电致发光 量子效率 激光线宽 窄带 系统间交叉 磷光 荧光 纳米技术 光学 单重态 物理 激光器 核物理学 激发态 图层(电子)
作者
Xingyu Huang,Jiahui Liu,Yulin Xu,Guohao Chen,Manli Huang,Mingxin Yu,Xialei Lv,Xiaojun Yin,Yang Zou,Jingsheng Miao,Xiaosong Cao,Chuluo Yang
出处
期刊:National Science Review [Oxford University Press]
卷期号:11 (6): nwae115-nwae115 被引量:67
标识
DOI:10.1093/nsr/nwae115
摘要

ABSTRACT Multi-boron-embedded multiple resonance thermally activated delayed fluorescence (MR-TADF) emitters show promise for achieving both high color-purity emission and high exciton utilization efficiency. However, their development is often impeded by a limited synthetic scope and excessive molecular weights, which challenge material acquisition and organic light-emitting diode (OLED) fabrication by vacuum deposition. Herein, we put forward a B‒N covalent bond-involved π-extension strategy via post-functionalization of MR frameworks, leading to the generation of high-order B/N-based motifs. The structurally and electronically extended π-system not only enhances molecular rigidity to narrow emission linewidth but also promotes reverse intersystem crossing to mitigate efficiency roll-off. As illustrated examples, ultra-narrowband sky-blue emitters (full-width at half-maximum as small as 8 nm in n-hexane) have been developed with multi-dimensional improvement in photophysical properties compared to their precursor emitters, which enables narrowband OLEDs with external quantum efficiencies (EQEmax) of up to 42.6%, in company with alleviated efficiency decline at high brightness, representing the best efficiency reported for single-host OLEDs. The success of these emitters highlights the effectiveness of our molecular design strategy for advanced MR-TADF emitters and confirms their extensive potential in high-performance optoelectronic devices.
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