Comparative Study on the Total Ionizing Dose Effects of the Superjunction and the Conventional Power MOSFETs

The effects of Total Ionizing Dose (TID) radiation on the cells and terminations of Superjunction MOSFET (SJ-MOS) and conventional power MOSFET (C-MOS) were studied by simulations, respectively. The same degradation trends in electrical parameters were found for the cells of these two devices; however, the breakdown voltage (BV) of the termination region in SJ-MOS shows much less sensitivity to TID radiation. The reason why SJ-MOS has a superior TID endurance is discussed in detail.