β-Ga2O3 Thin Film Based Lateral and Vertical Schottky Barrier Diode

In this work, we have compared and modeled the electrical characteristics of two different geometrical structures of unintentionally doped (UID) thin film β-Ga2O3 based Schottky barrier diodes (SBD). It was observed that a lateral SBD structure can withstand much higher breakdown voltage compared to the vertical SBD structure, but suffers from significantly higher on-resistance, which can be explained considering the differences in their geometrical configuration. The schottky barrier height was determined from both capacitance voltage (C-V) and current density voltage (J-V) characteristics of the SBDs, which matched well among themselves and with the values reported in the literature. The C-V measurement was also used to determine the doping concentration in the β-Ga2O3 substrate, which agreed well with the manufacturer specifications.