沉积(地质)
能量(信号处理)
工作(物理)
电介质
电场
领域(数学)
事件(粒子物理)
介电强度
材料科学
生物系统
电子工程
工程类
光电子学
物理
机械工程
数学
古生物学
量子力学
沉积物
纯数学
生物
作者
Arto Javanainen,Véronique Ferlet-Cavrois,Jukka Jaatinen,H. Kettunen,M. Muschitiello,Francesco Pintacuda,Mikko Rossi,J.R. Schwank,M.R. Shaneyfelt,A. Virtanen
出处
期刊:IEEE Transactions on Nuclear Science
[Institute of Electrical and Electronics Engineers]
日期:2013-08-01
卷期号:60 (4): 2660-2665
被引量:10
标识
DOI:10.1109/tns.2012.2236105
摘要
The underlying physical mechanisms in single event gate rupture (SEGR) are not known precisely. SEGR is expected to occur when the energy deposition due to a heavy ion strike exceeds a certain threshold simultaneously with sufficient electric field across the gate dielectric. Typically the energy deposition is described by using the linear energy transfer (LET) of the given ion. Previously the LET has been demonstrated not to describe the SEGR sufficiently. The work presented here introduces a semi-empirical model for the SEGR prediction based on statistical variations in the energy deposition which are described theoretically.
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