蓝宝石
Crystal(编程语言)
材料科学
基质(水族馆)
外延
衍射
薄膜
氧气
结晶学
蒸发
平面(几何)
单晶
光学
化学
几何学
纳米技术
物理
地质学
激光器
图层(电子)
有机化学
程序设计语言
计算机科学
数学
海洋学
热力学
作者
Shinji Nakagomi,Yoshihiro Kokubun
标识
DOI:10.1016/j.jcrysgro.2012.04.006
摘要
β-Ga2O3 thin films were prepared by gallium evaporation in oxygen plasma. The crystal orientation of the β-Ga2O3 films was studied in detail using X-ray diffraction, pole figure measurements and analysis using a crystal model. β-Ga2O3 films formed on both the (001) c-plane and (110) a-plane of the sapphire substrate were found to be strongly (2̄01) oriented. Six crystal types of β-Ga2O3 are formed, rotated about the [2̄01] direction. The six directions depend on the arrangement of oxygen on the surface of the sapphire substrate. The direction of [201] of β-Ga2O3 is vertical to the sapphire {100} planes. The arrangement of oxygen on the (001) c-plane sapphire substrate is equivalent to that formed on the (2̄01) plane of β-Ga2O3 due to a small mismatch in the spacing between oxygen atoms. This mismatch explains why β-Ga2O3 is (2̄01) oriented on the (001) c-plane sapphire substrate.
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