充电泵
电压
电荷(物理)
电气工程
二极管
光电子学
材料科学
物理
工程类
电容器
量子力学
作者
Jieh-Tsorng Wu,Kuen-Long Chang
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:1998-04-01
卷期号:33 (4): 592-597
被引量:361
摘要
New MOS charge pumps utilizing the charge transfer switches (CTSs) to direct charge flow and generate boosted output voltage are described. Using the internal boosted voltage to backward control the CTS of a previous stage yields charge pumps that are suitable for low-voltage operation. Applying dynamic control to the CTSs can eliminate the reverse charge sharing phenomenon and further improve the voltage pumping gain. The limitation imposed by the diode-configured output stage can be mitigated by pumping it with a clock of enhanced voltage amplitude. Using the new circuit techniques, a 1.2-V-to-3.5-V charge pump and a 2-V-to-16-V charge pump are demonstrated.
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