Berry连接和曲率
Chern类
量子反常霍尔效应
凝聚态物理
单层
物理
带隙
量子自旋霍尔效应
无缝回放
Dirac(视频压缩格式)
量子霍尔效应
联轴节(管道)
拓扑绝缘体
量子力学
拓扑(电路)
材料科学
几何相位
电子
纳米技术
数学
冶金
中微子
组合数学
几何学
作者
Xiangru Kong,Linyang Li,Ortwin Leenaerts,Weiyang Wang,Xiong-Jun Liu,F. M. Peeters
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2018-01-01
卷期号:10 (17): 8153-8161
被引量:33
摘要
The quantum anomalous Hall (QAH) effect is a topologically nontrivial phase, characterized by a non-zero Chern number defined in the bulk and chiral edge states in the boundary. Using first-principles calculations, we demonstrate the presence of the QAH effect in 1T-YN$_2$ monolayer, which was recently predicted to be a Dirac half metal without spin-orbit coupling (SOC). We show that the inclusion of SOC opens up a large nontrivial band gap of nearly $0.1$ eV in the electronic band structure. This results in the nontrivial bulk topology which is confirmed by the calculation of Berry curvature, anomalous Hall conductance and the presence of chiral edge states. Remarkably, a high Chern number $C = 3$ is found, and there are three corresponding gapless chiral edge states emerging inside the bulk gap. Our results open a new avenue in searching for QAH insulators with high temperature and high Chern numbers, which can have nontrivial practical applications.
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