Implantation energy- and size-dependent light output of enhanced-efficiency micro-LED arrays fabricated by ion implantation

A new process is presented for fabricating enhanced-efficiency micro-pixelated vertical-structured light-emitting diode (µVLED) arrays based on ion-implantation technology. High-resistivity selective regions are locally introduced in the n-GaN layer by ion implantation and then used as effective and non-destructive electrical isolation for realizing µVLED arrays with ultra-small pixel diameters. The implantation energy-dependent and size-dependent opto-electrical characteristics of fluorine (F - ) implanted µVLED arrays are investigated systematically. The results show that the optimally designed F - ion implantation not only can achieve smaller reverse leakage current but also can realize ion-induced thermal relaxation effectively and is more suited for fabricating high-resolution µVLED arrays with higher optical output power. For the F - -implanted µVLED array with pixel diameters of 10 µm, a measured output power density reaches a value of 82.1 W cm −2 at a high injection current density of 220 A cm −2 , before power saturation. Further, the output power densities and external quantum efficiencies of F - -implanted µVLED arrays with pixel diameters less than 10µm show strong dependences on pixel size due to the presence of defects-related SRH process. So, the high-efficiency µVLED arrays with ultra-small pixel sizes could be fabricated by an appropriately designed ion implantation combined with control of defect densities to meet the industrial requirement of microdisplay applications.