Study on defect-induced damage behaviors of ADP crystals by 355 nm pulsed laser

High-quality ammonium dihydrogen phosphate (NH 4 H 2 PO 4 , ADP) crystals were grown in Z direction and in defined crystallographic direction (θ=90°, φ=45°) by the rapid growth method, respectively. Defect-induced damage behavior in 355 nm of three types of ADP samples cutting in type-II matching and third harmonic generation direction from the as-grown crystals were investigated, including the initial laser induced damage (LID) characteristics and the physical and chemical properties of defects which serve as the damage precursors. The evaluations of damage behaviors include the “sampling” laser induced damage threshold (LIDT) by 1-on-1 and R-on-1 methods, bulk damage growth and bulk damage morphology. UV-visible transmittance spectrum, ultraviolet absorption spectrum, fluorescence spectrum, positron annihilation spectrum and the online light scattering measurements were carried out to investigate the defect-induced damage behavior in ADP crystals. The study will provide a reference for the investigations on laser induced damage properties of ADP crystals in short wavelength.