欧姆接触
高电子迁移率晶体管
光电子学
材料科学
晶体管
制作
阻挡层
基质(水族馆)
阈值电压
图层(电子)
电压
纳米技术
电气工程
工程类
病理
地质学
海洋学
替代医学
医学
作者
Weihong Jiang,H. Tang,J. A. Bardwell
标识
DOI:10.1088/1361-6641/abecab
摘要
Abstract In this paper, we report the fabrication of a normally-off AlGaN/GaN high electron mobility transistor (HEMT) using an ultra-thin AlGaN barrier layer structure on Si (111) substrate. Additional AlGaN layers were selectively regrown only on the ohmic contact areas. The fabricated device exhibits a positive threshold voltage of 0.3 V, a maximum drain output current of 753 mA mm −1 at gate voltage of +4 V, and low gate leakage of 1.2 × 10 −7 A mm −1 . The selective area growth method shows a promising way to achieve normally-off GaN based HEMTs with very good performance.
科研通智能强力驱动
Strongly Powered by AbleSci AI