电容器
材料科学
隔离器
电阻式触摸屏
金属绝缘体金属
光电子学
绝缘体(电)
聚焦离子束
电子工程
电气工程
堆栈(抽象数据类型)
电压
计算机科学
工程类
离子
物理
量子力学
程序设计语言
作者
Kuang Shien Lee,Lai Khei Kuan
出处
期刊:Proceedings
日期:2021-10-28
标识
DOI:10.31399/asm.cp.istfa2021p0324
摘要
Abstract Defects associated with metal-insulator-metal (MIM) capacitor failures can be difficult to locate using conventional fault isolation techniques because the capacitors are usually buried within a stack of back-end metal layers. In this paper, the authors explain, step by step, how they determined the cause of MIM capacitor failures, in one case, in an overvoltage protection device, and in another, a high-speed digital isolator circuit. The process begins with a preliminary fault isolation study based on OBIRCH or PEM imaging followed by more detailed analyses involving focused ion beam (FIB) cross-sectioning and delayering, micro- or nano-probing, resistive or voltage contrast imaging, and other such techniques.
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