钻石
化学气相沉积
晶格常数
材料科学
成核
金刚石材料性能
溅射沉积
单晶
溅射
外延
薄膜
晶体结构
基质(水族馆)
热膨胀
半最大全宽
金刚石立方
结晶学
图层(电子)
光电子学
纳米技术
光学
化学
衍射
复合材料
物理
海洋学
有机化学
地质学
作者
Qiang Wei,Gang Niu,Ruozheng Wang,Genqiang Chen,Fang Lin,Xiaofan Zhang,Zhaoyang Zhang,Hongxing Wang
摘要
The heteroepitaxy of a single crystal diamond has been carried out in the KTaO3 substrate using Ir as a buffer layer. KTaO3 has a perovskite lattice structure and displays a face-centered cubic structure. Its lattice constant is 3.98 Å, which is only 3% mismatched with the lattice constant of Ir of 3.84 Å, and also, its thermal expansion coefficient is 4.031 × 10−6/K, which is nearly close to that of diamond 3.85 × 10−6/K (at 1223 K), making it to be regarded as an alternate substrate of the heteroepitaxy of a single crystal diamond. The magnetron sputtering technique was used to deposit Ir thin films with a high orientation in the (001) direction on a KTaO3 (001) substrate. Thereafter, bias enhanced nucleation on Ir surface was grown by direct current chemical vapor deposition (CVD) methods. At last, a single crystal diamond with a size of 10 × 10 × 0.78 mm3 has been grown, whose (004) rocking curve FWHM is 183 arc sec, which testifies to the excellent crystalline quality of the heteroepitaxial diamond film.
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