Crystallization of a-Si films deposited by RF sputtering using blue direct diode laser

A Welding/Cutting laser system that uses Wavelength Beam Combining (WBC) technology for semiconductor blue lasers, the specifications for are 445 (nm) regions in wavelength, 400 (W) in output power with a fiber diameter of ≤50 (μm) and 2.0 (mm*mrad) (typical) in beam parameter product has developed. It is also possible to combine multiple of these to increase the power to a multi-kW level. Using this laser light source, we tried a laser annealing experiment on a sputtered amorphous silicon film (50 nm thickness) on inexpensive glass with the line laser (4.0 (mm)×38 (μm)). The result shows a high crystallinity and full width at half maximum (cm^-1) < 7 (nm) at the peak position of 517 (cm^-1) with Raman microscope, which was high uniformity in the in the 4mm length in long axis direction.