解算器
玻尔兹曼方程
声子
蒙特卡罗方法
电子
MOSFET
计算物理学
吸收(声学)
玻尔兹曼常数
比例(比率)
直接模拟蒙特卡罗
物理
材料科学
统计物理学
凝聚态物理
计算机科学
动态蒙特卡罗方法
晶体管
光学
量子力学
数学
统计
电压
程序设计语言
作者
Thi Thu Trang Nghiem,Jérome Saint‐Martin,Philippe Dollfus
标识
DOI:10.1109/sispad.2015.7292273
摘要
To investigate self-heating effects in double gate MOSFETs, a simulator solving self-consistently the Boltzmann transport equations (BTE) for both electrons and phonons has been developed. A Monte Carlo (MC) solver for electrons is coupled with a direct solver for the phonon transport. This method is particularly efficient to evaluate accurately the phonon emission and absorption spectra in both real and energy spaces. The resulting degradation of the I-V characteristics is estimated for a 20 nm-long Double-Gate MOSFET.
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