光电探测器
响应度
异质结
材料科学
纳米线
兴奋剂
光电子学
光探测
紫外线
氮化镓
纳米技术
图层(电子)
作者
Xin Tang,Yulin Zheng,Ben Cao,Qing Wu,Jinghan Liang,Wenliang Wang,Guoqiang Li
出处
期刊:ACS applied nano materials
[American Chemical Society]
日期:2022-03-10
卷期号:5 (3): 4515-4523
被引量:13
标识
DOI:10.1021/acsanm.2c00761
摘要
One-dimensional (1D) gallium nitride (GaN) has been used as building blocks to construct optoelectronic nanodevices because of its properties. However, the slow respond speed and narrow spectral detection range of nano-based devices hardly meet the requirements of high-speed and multifunction component development. Herein, we propose a promising strategy to realize photodetectors (PDs) featuring high responsivity, fast response speed, and a wide spectral response range by constructing GaN nanowire/Nb-doped MoS2 flake hybrid heterostructures. Thanks to the synergistic effect of GaN and doped MoS2, the integrated device exhibits high responsivity for ultraviolet (365 nm) as well as visible (500 nm) light, and the maximum value is 1.7 × 102 and 0.34 A/W. For UV detection, the integrated device shows fast response and its rise/fall time is <8/10 ms, which can rival or surpass many 1D nano-based PDs. Further investigation confirms that the type-II band alignment of the GaN/doped MoS2 heterojunction with a conduction band offset and a valence band offset of 0.19 and 2.09 eV, respectively, contributes to the enhanced photogenerated carrier separation and transfer process. The assembled PDs with broad-spectrum photoresponse and fast response speed have great promise as the next-generation hybrid photodetection devices.
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