Influence of waveguide structure on the optical and electrical properties of high-power semiconductor lasers

To increase the catastrophic optical damage (COD) power of high-power semiconductor lasers, two 808 nm semiconductor lasers with different waveguide structures were fabricated. The calculation results show that the optical confinement factor of the large optical cavity structure (structure A) and the super large cavity structure (structure B) are 0.742% and 0.636%, and the maximum output power is 29.5 W and 34.4 W. The experimental results show that the large optical cavity structure (structure A) reaches a maximum output power of 22.08 W at a current of 22 A; the super large cavity structure (structure B) reaches a maximum output power of 7.2 W at a current of 12 A and reaches a thermal saturation when the current continues to increase. The experimental results obtained show that the maximum output power is low for the ultra-large cavity structure (Structure B). The low Al component of the waveguide layer leads to severe carrier leakage, which increases the series resistance and further reduces the output power of the device.