碳化硅
氮化镓
功率半导体器件
逆变器
材料科学
宽禁带半导体
半导体
功勋
绝缘栅双极晶体管
半导体器件
背景(考古学)
电力电子
电气工程
计算机科学
电子工程
电压
工程物理
光电子学
工程类
纳米技术
古生物学
图层(电子)
冶金
生物
作者
Davide Cittanti,Enrico Vico,Radu Bojoi
出处
期刊:IEEE Access
[Institute of Electrical and Electronics Engineers]
日期:2022-01-01
卷期号:10: 51693-51707
被引量:14
标识
DOI:10.1109/access.2022.3174777
摘要
The drive inverter represents a central component of an electric vehicle (EV) drive train, being responsible for the DC/AC power conversion between the battery and the electrical machine. In this context, novel converter topologies adopting modern 600/650V wide bandgap (WBG) semiconductor devices will play a crucial role in improving the performance of next-generation drive inverters. In fact, WBG devices theoretically allow to achieve both higher inverter power density and higher conversion efficiency with respect to conventional silicon (Si) IGBT based solutions. Even though silicon carbide (SiC) devices are already well established in the automotive industry, high-voltage gallium nitride (GaN) devices are rapidly entering the market, promising higher theoretical performance but featuring a lower degree of maturity. As a consequence, it is currently not clear which semiconductor technology is most suited for future EV drive inverters. Therefore, this paper aims to address this gap providing a comparative performance evaluation of state-of-the-art SiC and GaN 600/650V active switches. In particular, a novel figure-of-merit (FOM) representing the minimum theoretical semiconductor losses under hard-switching operation is introduced. Remarkably, this FOM enables a fair and accurate performance comparison among semiconductor devices, allowing to clearly determine the best performing technology for a given set of application-specific conditions. The results of the comparative assessment show that currently available SiC and GaN active switch technologies can outperform each other depending on the semiconductor operating temperature and the converter switching frequency.
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