GaN-Based Modulation-Doped FETs and Heterojunction Bipolar Transistors

This chapter contains sections titled: Introduction Electron Transport Properties in GaN and GaN/AIGaN Heterostructures Bulk Mobility in GaN Polarization Effects, Mobility and Electron Concentration in 2 DEG Systems Partial Strain Relaxation Low-field Transport in 2 DEG Systems High-Field Transport Modulation-Doped Field Effect Transistors (MODFETs) MODFET Model Drain Current Model in MODFETs I–V Characteristics Experimental Considerations Schottky Barriers for Gates Contacts to GaN Experimental Performance of GaN MODFETs Power Amplifiers Anomalies in GaN/AlGaN MODFETs Low-Frequency and High-Frequency Noise Performance Low-Frequency Noise High-Frequency Noise Heterojunction Bipolar Transistors Conclusions Acknowledgments References