CMOS芯片
发光二极管
符号
电致发光
二极管
有机发光二极管
电气工程
计算机科学
数学
光电子学
物理
材料科学
工程类
算术
纳米技术
图层(电子)
作者
Hsu-Chi Lee,Yun-Chih Lu,Yu-Chen Lin,Wei-Lin Lai,Hsiang-Yuan Hsieh,Boy-Yiing Jaw,Chin-Tang Chuang,Yung-Chih Chen,Yi-Jan Emery Chen
出处
期刊:IEEE Transactions on Circuits and Systems for Video Technology
[Institute of Electrical and Electronics Engineers]
日期:2022-01-01
卷期号:32 (10): 7204-7211
被引量:1
标识
DOI:10.1109/tcsvt.2022.3168051
摘要
This paper presents a high-voltage emission driver chiplet for inorganic micro-pixelated light-emitting-diode ( $\mu $ LED) displays in a standard 0.18- $\mu \text{m}$ CMOS technology. Different from the conventional driving scheme of the active-matrix organic light-emitting-diode display, which places the scan drivers and emission drivers at the panel bezels, the CMOS driver chiplets are proposed to sit on the glass substrate among $\mu $ LEDs. The high-voltage swing buffers in the CMOS chiplet are used to drive the low-temperature poly-silicon thin-film transistors on glass backplane to enable the emission control of 300 $\mu $ LEDs. A single CMOS chiplet has 20 output channels, each offering 16M-color depth with 256 grey levels realized by an 8-bit digital-to-analog converter. The maximum channel current is 247 $\mu \text{A}$ and the TFT-gate-driving voltage is 15 V.
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