外延
材料科学
叠加断层
表征(材料科学)
堆积
巴(单位)
透射电子显微镜
宽禁带半导体
高分辨率透射电子显微镜
凝聚态物理
结晶学
光电子学
分子物理学
纳米技术
化学
位错
核磁共振
复合材料
物理
图层(电子)
气象学
作者
Massimo Camarda,Andrea Canino,Antonino La Magna,Francesco La Via,Feng Ge,Tsunenobu Kimoto,Masahiko Aoki,H. Kawanowa
摘要
Crystallographic, electronic, and energetic analyses of the (2,33) [or (2,3,3,3) in the standard Zhadanov notation] bar-shaped stacking fault, observed in as-grown 4H-SiC epitaxial layers, are presented. The defect has been identified by means of spatially resolved microphotoluminescence (μ-PL) measurements at different emission wavelengths, focusing on the emission peak at 0.3 eV below the conduction band. Low temperature μ-PL measurements have also been performed. The defect has been identified and characterized using high resolution transmission electron microscopy. Experimental results are correlated and validated by the calculations of the Kohn–Sham electronic band structure and the defect formation energy.
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