Effects of the Bi2O3-SiO2 addition on the sintering behavior and microwave dielectric properties of Zn1.8SiO3.8 ceramics

The effects of Bi2O3-SiO2 addition (denoted as BS) on the microstructure and microwave dielectric properties of Zn1.8SiO3.8 (denoted as ZS) ceramics have been investigated. It's proved that the addition of BS not only decreases the densification temperature effectively, but also contributes to the well microwave dielectric properties of ZS ceramics by the formation of Bi4(SiO4)3 phase at a low sintering temperature. In particular, when BS content was 20.0 wt%, the BS-added ceramics sintered at 875 °C for 2 h exhibited a low dielectric constant(Ɛr) of 6.78, a high quality factor(Q×f) of 28,742 GHz (at 15.7 GHz) and the temperature coefficient(τf) of the resonant frequency of −22.6 ppm/°C, which demonstrated a potential candidate for application of LTCC multilayer technology in millimeters and THz range.