The Crystal Growth of Bi2(MoO4)3

The Bi 2 (MoO 4 ) 3 powder was prepared by the solid state reaction of the constituent oxides at 600°C for 12 hours. The single crystal of Bi 2 (MoO 4 ) 3 was grown by Czochralski technique. The optimum conditions for pulling and rotation rates were 2 mm/hr and 12 rpm respectively. Laue patterns were obtained in (010) and (001) faces at room temperature. Temperature dependent electrical properties were studied for different crystal orientations and found that it has a phase transition temperature at (475±5)°C.