Boosting conversion efficiency by bandgap engineering of ecofriendly antimony trisulfide indoor photovoltaics via a modeling approach

Boosting(机器学习) 光伏 材料科学 光伏系统 带隙 光电子学 纳米技术 计算机科学 人工智能 工程类 电气工程 冶金
作者
Yu Cao,Qiang Li,Jing Zhou,Sanlong Wang,Xiaoming Yu,Xuan Yu,Sen Li,Jinbo Pang
出处
期刊:Solar Energy Materials and Solar Cells [Elsevier BV]
卷期号:273: 112961-112961 被引量:8
标识
DOI:10.1016/j.solmat.2024.112961
摘要

With the exponential growth of the Internet of Things (IoT), indoor photovoltaics (IPVs) have emerged as a pivotal technology for powering low-power devices, drawing heightened interest due to their adaptability to indoor environments. The Photovoltaic Conversion Efficiency (PCE) of IPV cells is critically dependent on their ability to match the indoor spectrum with the device's response characteristics. In this realm, Antimony Trisulfide (Sb2S3), characterized by its wide bandgap and high absorption coefficient, emerges as a promising candidate for low-light applications. Our study focuses on the modeling and numerical analysis of Sb2S3 thin-film IPV cells by wxAMPS software, aiming to refine both the device structure and its photoelectric performance for effective indoor light harvesting. In a strategic shift from conventional CdS materials, we utilized SnO2—known for its high transmissivity, non-toxicity, and wide bandgap—as the electron transport layer (ETL) in Sb2S3 IPV cells. This substitution notably enhanced the short-wave response, elevating the spectral response from 45 % to 80 % at 400 nm. Additionally, we introduced a bandgap-tunable ZnOS buffer layer. This innovation proved instrumental in rectifying the band alignment mismatch between SnO2 and Sb2S3 layer, thereby optimizing interfacial electron transport properties. The integration of the ZnOS buffer layer effectively improved the fill factor from 40.0 % to 64.7 % of the Sb2S3 IPV cell by solving the band mismatch problem. The resulting optimized Sb2S3 IPV cell demonstrated exceptional response characteristics across the full visible spectrum (400–750 nm) and showed notable photoelectric performance under both fluorescent lamps (FLs) and light-emitting diodes (LEDs). Moreover, a detailed analysis was conducted on the performance differences of the device under indoor light sources compared to solar spectrum conditions, along with the underlying mechanisms. Finally, the Sb2S3 IPV cell achieved a peak theoretical efficiency of 46.25 % under cold white FL lighting, a testament to the optimal match between the device structure and this specific emission power spectrum. This modeling research not only underscores the feasibility of employing antimony-based photovoltaic technologies in indoor settings but also offers theoretical guidance for further advancements in this domain.
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