Electrocatalytic Mechanisms for an Oxygen Evolution Reaction at a Rhombohedral Boron Monosulfide Electrode/Alkaline Medium Interface

Rhombohedral boron monosulfide (r-BS) with a layer stacking structure is a promising electrocatalyst for an oxygen evolution reaction (OER) within an alkaline solution. We investigated the catalytic mechanisms at the r-BS electrode/alkaline medium interface for an OER using hybrid solvation theory based on the first-principles method combined with classical solution theory. In this study, we elucidate the activities of the OER at the outermost r-BS sheet with and without various surface defects. The Gibbs free energies along the OER path indicate that the boron vacancies at the first and second layers of the r-BS surface (VB1 and VB2) can promote the OER. However, we found that the VB1 is easily occupied by the oxygen atom during the OER, degrading its electrocatalytic performance. In contrast, VB2 is suitable for the active site of the OER due to its structure stability. Next, we applied a bias voltage with the OER potential to the r-BS electrode. The bias voltage incorporates the positive excess surface charge into pristine r-BS and VB2, which can be understood by the relationship between the OER potential and potentials of zero charge at the r-BS electrode. Because the OH- ions are the starting point of the OER, the positively charged surface is kinetically favorable for the electrocatalyst owing to the attractive interaction with the OH- ions. Finally, we qualitatively discuss the flat-band potential at a semiconductor/alkaline solution interface. It suggests that p-type carrier doping could promote the catalytic performance of r-BS. These results explain the previous measurement of the OER performance with the r-BS-based electrode and provide valuable insights into developing a semiconductor electrode/water interface.