材料科学
光电探测器
光电子学
比探测率
光探测
纳米线
响应度
范德瓦尔斯力
光学
物理
量子力学
分子
作者
Yuhang Ma,Churong Ma,Huaxin Yi,Huanrong Liang,Wan Wang,Zhaoqiang Zheng,Yichao Zou,Zexiang Deng,Jiandong Yao,Guowei Yang
标识
DOI:10.1002/adom.202302039
摘要
Abstract High‐speed and sensitive UV–Vis photodetectors have been constructed based on a typical 1D van der Waals material, antimony sulfide (Sb 2 S 3 ). Impressively, the Sb 2 S 3 nanowire photodetector demonstrates pronounced photosensitivity exhibiting a remarkable on/off ratio of ≈2800 under a power density of 318 mW cm −2 . In addition, a high responsivity, an outstanding detectivity, and a short response/recovery time of 270 A W −1 , 4.37 × 10 13 Jones, and 10/12 ms are achieved. The competitive photosensitivity is associated with the intrinsic Mie resonance of the Sb 2 S 3 nanowire, which is conducive to enhancing the coupling of the Sb 2 S 3 photosensitive channel with incident light. By virtue of the unique 1D structural nature in both intrinsic and extrinsic perspectives, the Sb 2 S 3 nanowire photodetectors manifest distinct polarization‐discriminating photoresponse with the optimal dichroic ratio reaching ≈7.2. Moreover, the Sb 2 S 3 nanowire photodetectors demonstrate stable photoresponse from room temperature to 160 °C, and these nanodevices are durable against long‐term high‐temperature heating treatment at up to 300 °C. Taking advantage of the excellent thermal robustness, high‐temperature‐proof optoelectronic imaging and dual‐channel optical communication applications are demonstrated based on low‐dimensional van der Waals materials. On the whole, this study provides a new option for an advanced multifunctional optoelectronic system in extreme working environments.
科研通智能强力驱动
Strongly Powered by AbleSci AI