比较器
CMOS芯片
比较器应用
MOSFET
计算机科学
晶体管
功率(物理)
过程(计算)
电子工程
电气工程
工程类
电压
物理
量子力学
操作系统
作者
Sang‐Hyun Lee,Young‐Min Kim
标识
DOI:10.1109/icce-asia57006.2022.9954671
摘要
This paper focuses on the very limited input sense level that occurs when the two input terminals of a basic latched dynamic comparator are connected to the gates of a MOSFET pair. By connecting two input pairs to the body of the MOSFET, high-speed rail-to-rail input detection is achieved, while consuming power close to that of a conventional comparator. For comparison, each comparator was redesigned in a 65-nm CMOS process and simulated at 1.0 V supply voltage. The sampling rate was carried out at 125 MHz, and as a result, it is up to 6.6 times faster than the conventional comparator in worst case delay.
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