种姓
密度泛函理论
带隙
材料科学
电介质
直接和间接带隙
态密度
电子能带结构
凝聚态物理
太阳能电池
化学
光电子学
计算化学
物理
作者
Muhammad Usman Ghani,Muhammad Sagir,Muhammad Bilal Tahir,H.I. Elsaeedy,Saima Nazir,Hussein Alrobei,Meshal Alzaid
标识
DOI:10.1016/j.inoche.2023.111007
摘要
This work aims to test the structural, electronic, and optical properties of RbXCl3 (X = Ge, Sn, Pb). The presented discussion is reported through the Cambridge Assembly Serial Total Energy Package (CASTEP) based on density functional theory (DFT). DFT with the Generalized Gradient Approximation GGA correlational function and ultra-soft pseudo potential (PBE) is reported. RbGeCl3, RbSnCl3, and RbPbCl3 are in the cubic phase. The calculated band gaps of RbGeCl3, RbSnCl3, and RbPbCl3 are 1.03, 1.07, and 2.13 eV, respectively. The finding of a band gap is very well corroborated by the existing data. The band structures are further evaluated by partial density of state (PDS) and total density of state (TDOS). The partial and total density of states confirms the degree of localization of electrons. Optical properties were discussed in detail with the hypothetical dielectric function. It has been found that the dielectric function exhibits a wide range of energy transparency concerning its dielectric function. Materials were found to be effective in absorbing ultraviolet light, and having narrow band gaps which may be used for optoelectronic and solar cell appliances.
科研通智能强力驱动
Strongly Powered by AbleSci AI