分子束外延
晶格常数
材料科学
带隙
光电子学
格子(音乐)
基质(水族馆)
外延
位错
红外线的
埃
凝聚态物理
纳米技术
光学
结晶学
物理
衍射
化学
复合材料
海洋学
图层(电子)
地质学
声学
作者
Stefan P. Svensson,Nadeemullah A. Mahadik,G. Kipshidze,Dmitri Donetski,Jingze Zhao,Gregory Belenky
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2023-06-21
卷期号:41 (4)
被引量:4
摘要
Virtual substrates with lattice constants in the range mid-way between InAs and InSb have been developed using molecular beam epitaxy (MBE). The III–V alloys in this range are of particular interest for narrow bandgap device applications, such as infrared detection. In all cases, GaSb was used as the real substrate and the lattice constant was increased using linear, analog grades of GaInSb or AlGaInSb. We determined the resulting threading dislocation density with x-ray topography in InAsSb films grown on top. We describe the importance of defect reduction for determination of basic materials properties, such as fundamental bandgap, give examples of new device structures that are enabled by this technology, and discuss future directions for possible further improvements.
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