记忆电阻器
图层(电子)
材料科学
制作
极性(国际关系)
基质(水族馆)
纳米技术
过程(计算)
电阻随机存取存储器
薄膜
光电子学
沉积(地质)
数据保留
导电体
计算机科学
计算机硬件
电压
电气工程
化学
工程类
复合材料
替代医学
细胞
海洋学
病理
生物
操作系统
古生物学
生物化学
医学
沉积物
地质学
作者
Semyon Bachinin,Anastasia Lubimova,Artem Polushkin,Sergei S. Rzhevskii,Maria Timofeeva,Valentin A. Milichko
标识
DOI:10.1016/j.photonics.2023.101222
摘要
Metal–organic frameworks (MOFs) have recently emerged as a new class of functional materials for opto- and micro-electronic applications. Herein, the transition from laboratory samples of devices to their prototypes remains a challenge. Here we report a prototype of memristive device based on MOF (HKUST-1). The MOF thin film with a thickness of 130 nm and a size of 1 × 1 in. has been fabricated Layer-by-layer technique on a conductive substrate followed by the deposition of top Ag contacts. A fully automated process of applying voltage to write the binary data (at 0.8 ± 0.1 V), read it (by 0.4 V) and then erase (by inverted polarity with 0.4 ± 0.1 V) made it potentially possible to process arbitrary words for at least 10 cycles. The provided prototype, consisting of 10 × 10 memory cells, opens up prospects for real-life application of MOF-based logic elements, as well as reveals the challenges for their fabrication and exploitation.
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