Fundamental study of P-type doping in MoCVD-grown Ga2O3

Ultrawide bandgap semiconductors offer a promising shift from silicon-based power electronics, catering to more efficient and compact alternatives in applications like next-gen power grid controls, ultrafast electric vehicle charging, high-voltage power converters, and beyond. However, current power systems using III-Nitride materials face challenges due to high defect density and low operating efficiencies, stemming from the absence of commercially viable native substrates. Gallium Oxide (Ga2O3), a novel material, emerges as a solution with native substrates and favorable properties such as an ultrawide bandgap and high critical electric field. Integrating Ga2O3 with III-Nitride materials is expected to harness the high critical electric field and native substrates in Ga2O3, combined with the superior thermal conductivity of III-Nitride. This study reports the first epitaxial growth of N-polar III-Nitride/Ga2O3 heterogeneous heterostructures, showcasing enhanced material qualities, especially in electron mobility. This breakthrough enables the development of power transistors with a 10X increase in power density, addressing size, weight, and power power constraints in applications