歧化
发光二极管
钙钛矿(结构)
材料科学
二极管
分解
兴奋剂
热分解
SN2反应
光电子学
量子效率
化学工程
化学
催化作用
结晶学
有机化学
立体化学
工程类
作者
Xiang Guan,Jianxun Lu,Qi Wei,Yuqing Li,Yuanyuan Meng,Kebin Lin,Yaping Zhao,Wenjing Feng,Lei Zhu,Guichuan Xing,Zhanhua Wei
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2023-02-24
卷期号:8 (3): 1597-1605
被引量:25
标识
DOI:10.1021/acsenergylett.2c02822
摘要
Nontoxic Sn-based perovskite light-emitting diodes (Pero-LEDs) have been developing rapidly in recent years. However, high-quality Sn-based perovskite films are hardly prepared because of the heavy self-doping of Sn4+ in the as-prepared films. Most previous reports indicate that the Sn4+ formation is mainly attributed to the Sn2+ oxidation by external oxidizers. Here, for the first time, we reveal that the disproportionation decomposition of Sn2+ during the annealing process plays a critical role in degrading device performance. To resolve this issue, we introduced formamidine thiocyanate into the perovskite precursor as a thermal-sacrificial agent to alleviate the disproportionation decomposition. Finally, we achieved efficient Pero-LEDs with a maximum external quantum efficiency of 5.3% and ultralow efficiency roll-off. This work provides a view of understanding the instability of Sn-based perovskite and presents a practical method to achieve efficient Sn-based Pero-LEDs by suppressing the disproportionation decomposition of Sn2+.
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