材料科学
响应度
光电探测器
光电子学
蓝宝石
外延
可见光谱
氮化镓
光学
图层(电子)
纳米技术
激光器
物理
作者
Sunjae Kim,Youngbin Yoon,Dahee Seo,Ji-Hyeon Park,Dae‐Woo Jeon,Wan Sik Hwang,Myunghun Shin
出处
期刊:APL Materials
[American Institute of Physics]
日期:2023-06-01
卷期号:11 (6)
被引量:19
摘要
This paper describes the heteroepitaxial growth of high-quality alpha-phase gallium oxide (α-Ga2O3) on a sapphire substrate without a buffer layer via the hydride vapor phase epitaxy method. Here, compressive strain arising from the difference in lattice constants between the substrate and α-Ga2O3 is relieved near the interface, resulting in a high crystal quality of 32.72 arcsec (full width at half maximum value) in the high-resolution x-ray diffraction 2θ scan spectrum. Subsequently, the fabricated hetero α-Ga2O3-based photodetector with a metal–semiconductor–metal structure operating under ultraviolet radiation in the C-band (UVC) demonstrates a high UVC responsivity of 5 × 102 A W−1 and a high visible blindness of 8.14 × 104 at 235 nm. The photodetector utilizes photogenerated holes trapped near the interface of the metal electrode, inducing amplified electron current flow. The developed hetero α-Ga2O3-based UVC photodetector can be used to detect early signs of fire, flames, or corona discharge in visible light environments for social and industrial safety applications.
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