低压
灵敏度(控制系统)
电气工程
超低功耗
电源抑制比
直线(几何图形)
电压
功率(物理)
电压基准
物联网
计算机科学
电子工程
工程类
开关电源
嵌入式系统
物理
功率消耗
数学
量子力学
几何学
作者
Komal Duggal,Rishikesh Pandey,Vandana Niranjan
标识
DOI:10.1142/s021812662550121x
摘要
This paper proposes an all MOSFET transistor-based voltage reference with ultra-low power consumption and high PSRR for Internet of Things applications. The reference voltage is computed using the gate source voltages of the five NMOS transistors, excluding the use of any transistors with high threshold voltages. To provide a steady clamping voltage for the current source, a supply voltage stability circuit with a current source is added which enhances the proposed voltage reference line sensitivity and PSRR. It has been designed and simulated in 0.18[Formula: see text][Formula: see text]m CMOS technology to simulate the proposed voltage reference where all MOSFETs function in the subthreshold region with a 0.5[Formula: see text]V minimum supply voltage. The proposed voltage reference produces a reference voltage of 129.7[Formula: see text]mV with a supply voltage range of 0.5–3[Formula: see text]V. Based on simulation results, the proposed voltage reference has an active area of 0.001[Formula: see text]mm 2 , requires 11.2[Formula: see text]pW of power and has a line sensitivity of 0.021%/V. For a temperature range of [Formula: see text]40 ∘ C to [Formula: see text]C, the circuit achieves a temperature coefficient of 38.2[Formula: see text]ppm/ ∘ C. The power supply rejection ratio of the proposed voltage reference is [Formula: see text]101.5[Formula: see text]dB at 10[Formula: see text]Hz and [Formula: see text]90[Formula: see text]dB at 100[Formula: see text]Hz. The output noise at 100[Formula: see text]Hz and 1[Formula: see text]kHz is 4.68[Formula: see text]and 4.22[Formula: see text][Formula: see text]V/[Formula: see text]Hz, respectively.
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