材料科学
薄膜
纳米晶材料
退火(玻璃)
溅射沉积
溅射
结晶度
粒度
热电效应
分析化学(期刊)
电子迁移率
晶界
光电子学
纳米技术
冶金
复合材料
微观结构
热力学
物理
化学
色谱法
作者
Tingrui Gong,Lei Gao,Lingfeng Kang,Maolin Shi,Gu Hou,Shenghui Zhang,Dechao Meng,Juntao Li,Wei Su
标识
DOI:10.1002/advs.202403845
摘要
Abstract Magnetron‐sputtered thermoelectric thin films have the potential for reproducibility and scalability. However, lattice mismatch during sputtering can lead to increased defects in the epitaxial layer, which poses a significant challenge to improving their thermoelectric performance. In this work, nanocrystalline n‐type Bi 2 Te 3 thin films with an average grain size of ≈110 nm are prepared using high‐temperature sputtering and post‐annealing. Herein, it is demonstrated that high‐temperature treatment exacerbates Te evaporation, creating Te vacancies and electron‐like effects. Annealing improves crystallinity, increases grain size, and reduces defects, which significantly increases carrier mobility. Furthermore, the pre‐deposited Ti additives are ionized at high temperatures and partially diffused into Bi 2 Te 3 , resulting in a Ti doping effect that increases the carrier concentration. Overall, the 1 µm thick n‐type Bi 2 Te 3 thin film exhibits a room temperature resistivity as low as 3.56 × 10 −6 Ω∙m. Notably, a 5 µm thick Bi 2 Te 3 thin film achieves a record power factor of 6.66 mW mK −2 at room temperature, which is the highest value reported to date for n‐type Bi 2 Te 3 thin films using magnetron sputtering. This work demonstrates the potential for large‐scale of high‐quality Bi 2 Te 3 ‐based thin films and devices for room‐temperature TE applications.
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