Ionic Liquid-Assisted Strategy for Morphology Engineering of Inorganic Cesium-Based Perovskite Thin Films Toward High-Performance Solar Cells

The wide bandgap CsPbI₂Br perovskite materials have attracted significant attention due to their high thermal stability and compatibility with narrow bandgap materials in tandem devices. The performance of perovskite solar cells (PSCs) is highly dependent on the quality of the perovskite layer, which is governed by the crystallization process during solution processing. However, the crystallization dynamics of CsPbI₂Br thin films remain less explored compared to conventional organic-inorganic perovskites. Achieving high-quality CsPbI₂Br films with uniform morphology and large perovskite grains remains challenging with standard solution techniques. This study applies the ionic liquid (IL) [EMIM]⁺[PF₆]^- as an additive within the bulk CsPbI₂Br absorber layer. Within our experimental regime, [EMIM]⁺[PF₆]^- accelerates the crystallization process while promoting the formation of large perovskite grains, a feature not commonly observed in previous studies. Our experimental results suggest that the IL acts as heterogeneous nucleation sites, and varying IL incorporation amount significantly impacts the morphology of CsPbI₂Br perovskite films. Consistent UV-vis and photoluminescence (PL) red-shifts are observed in the IL-incorporated CsPbI₂Br films, with X-ray diffraction (XRD) data projecting an influence on the perovskite crystal structure. These findings provide new insights into the role of ILs in controlling crystallization and morphology that have been minimally discussed in the literature. The incorporation of an optimized amount of [EMIM]⁺[PF₆]^- promotes the formation of highly crystalline perovskite thin films with excellent morphology, reducing defect density, enhancing carrier transport, and yielding large grain sizes. As a result, PSCs fabricated with [EMIM]⁺[PF₆]^- achieved a power conversion efficiency (PCE) of 17.11% (stabilized at 15.87%) and an open-circuit voltage (V_OC) of 1.39 V, along with improved stability compared to control devices. This work provides a straightforward approach for producing high-quality CsPbI₂Br thin films with high reproducibility, contributing valuable advancements to Cs-based PSCs.