光电探测器
硒
材料科学
光电子学
雪崩光电二极管
纳米技术
探测器
光学
物理
冶金
作者
Handa Liu,Haoxin Huang,Yunpeng Xia,Han Zhang,H. Wang,Jiajia Zha,Chaoliang Tan
摘要
Photodetectors are now indispensable in our daily lives, and there is a pressing need to explore new materials and mechanisms that can push the boundaries of device performance. Two-dimensional (2D) van der Waals (vdW) semiconductors have emerged recently as a promising material platform with exceptional optoelectronic properties, making them particularly suitable for high-performance photodetectors. However, photoinduced carrier generation in conventional 2D vdW photodetectors are usually limited, and new mechanisms need to be introduced to enhance device performance. Herein, we report a high-performance avalanche photodetector based on selenium (Se) nanoflakes. Our device achieves a high photoresponsivity (R) and specific detectivity (D*) of 361 A·W−1 and 2.4 × 1012 Jones, respectively. These figures of merit are two orders of magnitude higher than that in conventional Se photoconductive photodetectors. As a large bandgap vdW semiconductor, the Se channel allows the application of an extremely large bias voltage across it, and the resulting high electric field leads to the avalanche multiplication of carriers, which lays the groundwork for the improved device performance.
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