2D Black Phosphorus Infrared Photodetectors

Abstract 2D black phosphorus ( b ‐P) possesses several remarkable properties, including ambipolar transport, high carrier mobility, in‐plane anisotropy, polarization sensitivity, a narrow direct bandgap that can be tuned with the number of layers, and highly compatible with silicon‐based technologies. These characteristics make it a promising material for photodetection in the near‐infrared to mid‐infrared range. However, to date, most of the reviews on b ‐P are centered around electronic and optoelectronic devices, with few specifically addressing infrared detection. Herein, the recent research progress on b ‐P infrared detectors is summarized in this review. This article introduces the principle of optoelectronic detection, the main properties of 2D b ‐P, the development history of b ‐P fabrication methods, presents and discusses the performance and characteristics of various infrared photodetectors based on different structures of 2D b ‐P that have been researched in recent years. Finally, the challenges that may be faced by black phosphorus‐based infrared photoelectric detectors are briefly introduced, and the potential application directions are discussed from the perspective of large‐scale production and practical application. This article provides an in‐depth analysis and evaluation of the future development prospects of 2D b ‐P materials as a potential excellent candidate of infrared photodetectors.