In Situ Growth of Wafer‐Scale Patterned Graphene and Fabrication of Optoelectronic Artificial Synaptic Device Array Based on Graphene/n‐AlGaN Heterojunction for Visual Learning

石墨烯 材料科学 薄脆饼 异质结 神经形态工程学 纳米技术 光电子学 制作 计算机科学 人工神经网络 人工智能 医学 病理 替代医学
作者
Yang Chen,Zhiming Shi,Bingchen Lv,Wei Zhang,Shanli Zhang,Hang Zang,Yuanyuan Yue,Ke Jiang,Jianwei Ben,Yuping Jia,Mingrui Liu,Shunpeng Lü,Rui Sun,Tong Wu,Shaojuan Li,Xiaojuan Sun,Dabing Li
出处
期刊:Small [Wiley]
卷期号:20 (34) 被引量:1
标识
DOI:10.1002/smll.202401150
摘要

Abstract The unique optical and electrical properties of graphene‐based heterojunctions make them significant for artificial synaptic devices, promoting the advancement of biomimetic vision systems. However, mass production and integration of device arrays are necessary for visual imaging, which is still challenging due to the difficulty in direct growth of wafer‐scale graphene patterns. Here, a novel strategy is proposed using photosensitive polymer as a solid carbon source for in situ growth of patterned graphene on diverse substrates. The growth mechanism during high‐temperature annealing is elucidated, leading to wafer‐scale graphene patterns with exceptional uniformity, ideal crystalline quality, and precise control over layer number by eliminating the release of volatile from oxygen‐containing resin. The growth strategy enables the fabrication of two‐inch optoelectronic artificial synaptic device array based on graphene/n‐AlGaN heterojunction, which emulates key functionalities of biological synapses, including short‐term plasticity, long‐term plasticity, and spike‐rate‐dependent plasticity. Moreover, the mimicry of visual learning in the human brain is attributed to the regulation of excitatory and inhibitory post‐synapse currents, following a learning rule that prioritizes initial recognition before memory formation. The duration of long‐term memory reaches 10 min. The in situ growth strategy for patterned graphene represents the novelty for fabricating fundamental hardware of an artificial neuromorphic system.
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