单层
自旋电子学
兴奋剂
凝聚态物理
费米能级
过渡金属
自旋极化
物理
电子能带结构
电子结构
杂质
自旋(空气动力学)
铁磁性
材料科学
纳米技术
化学
电子
生物化学
催化作用
量子力学
热力学
作者
Maokun Wu,Xiaolong Yao,Hao Yuan,Hong Dong,Yahui Cheng,Hui Liu,Feng Lu,Weichao Wang,Kyeongjae Cho,Weihua Wang
出处
期刊:Physics Letters A
日期:2017-10-19
卷期号:382 (2-3): 111-115
被引量:60
标识
DOI:10.1016/j.physleta.2017.10.024
摘要
Utilizing first-principles calculations, the electronic structures, magnetic properties and band alignments of monolayer MoS2 doped by 3d transition metal atoms have been investigated. It is found that in V, Cr, Mn, Fe-doped monolayers, the nearest neighboring S atoms (SNN) are antiferromagnetically polarized with the doped atoms. While in Co, Ni, Cu, Zn-doped systems, the SNN are ferromagnetically coupled with the doped atoms. Moreover, the nearest neighboring Mo atoms also demonstrate spin polarization. Compared with pristine monolayer MoS2, little change is found for the band edges' positions in the doped systems. The Fermi level is located in the spin-polarized impurity bands, implying a half-metallic state. These results provide fundamental insights for doped monolayer MoS2 applying in spintronic, optoelectronic and electronic devices.
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