化学气相沉积
光电探测器
材料科学
半导体
管(容器)
激光器
波长
硫化铅
单晶
光电子学
光学
化学
结晶学
物理
量子点
复合材料
作者
Jun Zhang,Kanwen Hou,Tao Huang,Jia Yang,Baoqiang Xu,Shaoyuan Li,Bin Yang,Wenhui Ma
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2022-05-06
卷期号:4 (5): 2455-2462
被引量:8
标识
DOI:10.1021/acsaelm.2c00233
摘要
The V–VI group sulfide, Sb2S3, has been widely studied in the application of optoelectronic components because of its distinctive one-dimensional structure and remarkable optoelectronic properties. Low-dimensional semiconductor materials have attracted widespread interest among scientists because they offer more advantages than their bulk or powder forms for optoelectronic applications. In this work, we report the preparation of centimeter-scale length (0.5–2.2 cm) single-crystal Sb2S3 tubes by chemical vapor deposition (CVD). A photodetector based on a single Sb2S3 tube has a promising optical response over the spectral range of about 450 to 808 nm. The best photoresponse was measured by laser irradiation at a wavelength of 808 nm, and a high current switching ratio of about 200 was obtained with fast rise/decay times of 22 and 24 ms, respectively. Moreover, the Sb2S3 tube-based device exhibited excellent switching cycle stability, which is beneficial for practical applications. These encouraging results facilitate the potential applications of Sb2S3 tube-based optoelectronic and semiconductor devices.
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